Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 50A; 2.5W; SO8

Multiples: 1.0
Minimum quantity: 1.0
Product code: FDS6690AS
Manufacturer: ON SEMICONDUCTOR
Manufacturer code: FDS6690AS
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 50A; 2.5W; SO8

Mounting SMD
Case SO8
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology PowerTrench®
Drain-source voltage 30V
Drain current 10A
Pulsed drain current 50A
Power dissipation 2.5W
On-state resistance 12mΩ
Gate charge 23nC