Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: FDN338P
    Manufacturer: ONSEMI
    Manufacturer code: FDN338P
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    0.82 €

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    Specification for Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3

    Mounting SMD
    Case SuperSOT-3
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices logic level
    Technology PowerTrench®
    Drain-source voltage -20V
    Drain current -1.6A
    Power dissipation 500mW
    On-state resistance 165mΩ
    Gate charge 6.2nC