Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: FDC5614P
    Manufacturer: ONSEMI
    Manufacturer code: FDC5614P
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    1.06 € 1.06 € (wo VAT) 1.06 EUR

    1.06 €

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    Specification for Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6

    Mounting SMD
    Case SuperSOT-6
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices logic level
    Technology PowerTrench®
    Drain-source voltage -60V
    Drain current -3A
    Power dissipation 1.6W
    On-state resistance 190mΩ
    Gate charge 24nC