Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: FDB024N06
    Manufacturer: ON SEMICONDUCTOR
    Manufacturer code: FDB024N06
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 60V
    Drain current 190A
    Power dissipation 395W
    On-state resistance 2.4mΩ
    Gate charge 226nC