Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN

    Multiples: 450.0
    Minimum quantity: 450.0
    Product code: FDA16N50-F109
    Manufacturer: ONSEMI
    Manufacturer code: FDA16N50-F109
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN

    Mounting THT
    Case TO3PN
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology UniFET™
    Drain-source voltage 500V
    Drain current 9.9A
    Pulsed drain current 66A
    Power dissipation 205W
    On-state resistance 380mΩ
    Gate charge 45nC