Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: DIW065SIC080
    Manufacturer: DIOTEC SEMICONDUCTOR
    Manufacturer code: DIW065SIC080
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 650V
    Drain current 26A
    Pulsed drain current 100A
    Power dissipation 175W
    On-state resistance 75mΩ
    Gate charge 75nC