Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: DI7A6N10SQ
    Manufacturer: DIOTEC SEMICONDUCTOR
    Manufacturer code: DI7A6N10SQ
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 100V
    Drain current 7.6A
    Pulsed drain current 200A
    Power dissipation 2.5W
    On-state resistance 28mΩ
    Gate charge 22nC