Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: BXW60M1K2J
    Manufacturer: BRIDGELUX
    Manufacturer code: BXW60M1K2J
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W

    Mounting THT
    Case TO247-4
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 60A
    Pulsed drain current 240A
    On-state resistance 80mΩ
    Gate charge 170nC