Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: BUK7J1R4-40HX
    Manufacturer: NEXPERIA
    Manufacturer code: BUK7J1R4-40HX
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Application
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W

    Mounting SMD
    Case PowerSO8, SOT1023
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology Trench
    Drain-source voltage 40V
    Application automotive industry
    Drain current 190A
    Pulsed drain current 600A
    Power dissipation 395W
    On-state resistance 1.4mΩ
    Gate charge 103nC