Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: BSO613SPVGXUMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: BSO613SPVGXUMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

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    Specification for Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8

    Mounting SMD
    Case SO8
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology SIPMOS™
    Drain-source voltage -60V
    Drain current -3.44A
    Pulsed drain current -13.8A
    Power dissipation 2.5W
    On-state resistance 130mΩ