Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: BSC100N03MSGATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: BSC100N03MSGATMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8

    Mounting SMD
    Case PG-TDSON-8
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices logic level
    Technology OptiMOS™ 3
    Drain-source voltage 30V
    Drain current 28A
    Pulsed drain current 176A
    Power dissipation 30W
    On-state resistance 10mΩ
    Gate charge 5.8nC