Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: B2M035120YP
    Manufacturer: BASiC SEMICONDUCTOR
    Manufacturer code: B2M035120YP
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W

    Mounting THT
    Case TO247PLUS-4
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 60A
    Pulsed drain current 190A
    Power dissipation 375W
    On-state resistance 35mΩ
    Gate charge 115nC