Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: AOTF10B60D
    Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
    Manufacturer code: AOTF10B60D
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time
    • Turn-off switching energy
    • Turn-on switching energy
    • Collector-emitter saturation voltage

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    2.12 €

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    Specification for Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ

    Mounting THT
    Case TO220F
    Kind of package tube
    Type of transistor IGBT
    Turn-on time 25ns
    Power dissipation 16.7W
    Gate-emitter voltage ±20V
    Pulsed collector current 40A
    Collector current 10A
    Gate charge 17.4nC
    Collector-emitter voltage 600V
    Turn-off time 80.8ns
    Turn-off switching energy 0.16mJ
    Turn-on switching energy 0.35mJ
    Collector-emitter saturation voltage 1.53V