Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: AOT20B65M1
    Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
    Manufacturer code: AOT20B65M1
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time
    • Turn-off switching energy
    • Turn-on switching energy
    • Collector-emitter saturation voltage

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    Specification for Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ

    Mounting THT
    Case TO220
    Kind of package tube
    Type of transistor IGBT
    Turn-on time 51ns
    Power dissipation 114W
    Gate-emitter voltage ±30V
    Pulsed collector current 60A
    Collector current 20A
    Gate charge 46nC
    Collector-emitter voltage 650V
    Turn-off time 135ns
    Turn-off switching energy 0.27mJ
    Turn-on switching energy 0.47mJ
    Collector-emitter saturation voltage 1.7V