Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: 2SK3475(TE12L,F)
    Manufacturer: TOSHIBA
    Manufacturer code: 2SK3475(TE12L,F)
    • Case
    • Kind of package
    • Kind of package
    • Electrical mounting
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • Frequency
    • Kind of transistor
    • Output power
    • Open-loop gain
    • Efficiency

    2.64 € 2.64 € (wo VAT) 2.64 EUR

    2.64 €

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    Specification for Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW

    Case SOT89
    Kind of package reel, tape
    Electrical mounting SMT
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel depleted
    Drain-source voltage 20V
    Drain current 1A
    Power dissipation 3W
    Frequency 520MHz
    Kind of transistor RF
    Output power 630mW
    Open-loop gain 14.9dB
    Efficiency 45%