Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
WNSC2M40120R6Q
Tootja: WeEn Semiconductors
Tootja tootekood: WNSC2M40120R6Q
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 52A |
Pulsed drain current | 100A |
Power dissipation | 405W |
On-state resistance | 55mΩ |
Gate charge | 19nC |