Transistor: N-MOSFET
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
SIHB12N60ET1-GE3
Tootja: VISHAY
Tootja tootekood: SIHB12N60ET1-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Case | D2PAK, TO263 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Drain-source voltage | 600V |
Drain current | 7.8A |
Pulsed drain current | 27A |
Power dissipation | 147W |
On-state resistance | 380mΩ |
Gate charge | 58nC |