Transistor: N-MOSFET
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
SIHB11N80E-GE3
Tootja: VISHAY
Tootja tootekood: SIHB11N80E-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Case | D2PAK, TO263 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Drain-source voltage | 800V |
Drain current | 8A |
Pulsed drain current | 32A |
Power dissipation | 179W |
On-state resistance | 440mΩ |
Gate charge | 88nC |