Transistor: P-MOSFET

    Kordarv: 3000.0
    Minimum quantity: 3000.0
    Tootekood: SI8823EDB-T2-E1
    Tootja: VISHAY
    Tootja tootekood: SI8823EDB-T2-E1
    • Mounting
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • Gate charge

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    Spetsifikatsioon tootele Transistor: P-MOSFET

    Mounting SMD
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -20V
    Drain current -2.7A
    Pulsed drain current -15A
    Power dissipation 900mW
    Gate charge 17nC