Transistor: N-MOSFET
Kordarv:
3000.0
Minimum quantity:
3000.0
Tootekood:
SI3900DV-T1-GE3
Tootja: VISHAY
Tootja tootekood: SI3900DV-T1-GE3
Spetsifikatsioon tootele Transistor: N-MOSFET
Mounting | SMD |
Case | TSOP6 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 20V |
Drain current | 2.4A |
Pulsed drain current | 8A |
Power dissipation | 1.15W |
On-state resistance | 200mΩ |
Gate charge | 4nC |