Transistor: P-MOSFET

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SI2369BDS-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SI2369BDS-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: P-MOSFET

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -30V
    Drain current -7.5A
    Pulsed drain current -50A
    Power dissipation 2.5W
    On-state resistance 39mΩ
    Gate charge 19.5nC