Transistor: P-MOSFET
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
SI2316BDS-T1-GE3
Tootja: VISHAY
Tootja tootekood: SI2316BDS-T1-GE3
Spetsifikatsioon tootele Transistor: P-MOSFET
Mounting | SMD |
Case | SOT23 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 30V |
Drain current | 4.5A |
Pulsed drain current | 20A |
Power dissipation | 1.66W |
On-state resistance | 80mΩ |
Gate charge | 9.6nC |