Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MKI100-12F8
    Tootja: IXYS
    Tootja tootekood: MKI100-12F8
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Technology
    • Type of module
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; diode/transistor; H-bridge; Urmax: 1.2kV; Ic: 125A

    Case E3-Pack
    Electrical mounting Press-in PCB
    Mechanical mounting screw
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Technology HiPerFRED™, NPT
    Type of module IGBT
    Power dissipation 640W
    Gate-emitter voltage ±20V
    Pulsed collector current 200A
    Topology H-bridge
    Collector current 125A