Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MG35P12P3
    Tootja: YANGJIE TECHNOLOGY
    Tootja tootekood: MG35P12P3
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Type of module
    • Application
    • Application
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Topology
    • Topology
    • Topology
    • Collector current

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Product downloads

    Spetsifikatsioon tootele Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3

    Electrical mounting Press-in PCB
    Mechanical mounting screw
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Type of module IGBT
    Application Inverter, motors
    Gate-emitter voltage ±20V
    Pulsed collector current 70A
    Topology boost chopper, IGBT half-bridge x3, NTC thermistor, three-phase diode bridge
    Collector current 35A