Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
LGE3M35120Q
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M35120Q
Product downloads
Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 44A |
Pulsed drain current | 130A |
Power dissipation | 300W |
On-state resistance | 63mΩ |