Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; ISOPLUS i4-pac™

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: IXTF6N200P3
Tootja: IXYS
Tootja tootekood: IXTF6N200P3
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • Reverse recovery time
  • Gate charge

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Spetsifikatsioon tootele Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; ISOPLUS i4-pac™

Mounting THT
Case ISOPLUS i4-pac™ x024c
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices standard power mosfet
Drain-source voltage 2kV
Drain current 4A
Power dissipation 215W
Reverse recovery time 520ns
Gate charge 143nC