Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
IXBN75N170
Tootja: IXYS
Tootja tootekood: IXBN75N170
Product downloads
Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Case | SOT227B |
Electrical mounting | screw |
Mechanical mounting | screw |
Semiconductor structure | single transistor |
Max. off-state voltage | 1.7kV |
Features of semiconductor devices | high voltage |
Technology | BiMOSFET™ |
Type of module | IGBT |
Power dissipation | 625W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 680A |
Collector current | 75A |