Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: IXBN75N170
Tootja: IXYS
Tootja tootekood: IXBN75N170
  • Case
  • Electrical mounting
  • Mechanical mounting
  • Semiconductor structure
  • Max. off-state voltage
  • Features of semiconductor devices
  • Technology
  • Type of module
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Collector current

112,07 € 112,07 € (KM-TA) 112.07000000000001 EUR

112,07 €

Seda kombinatsiooni ei eksisteeri.

Lisa ostukorvi

Product downloads

Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B

Case SOT227B
Electrical mounting screw
Mechanical mounting screw
Semiconductor structure single transistor
Max. off-state voltage 1.7kV
Features of semiconductor devices high voltage
Technology BiMOSFET™
Type of module IGBT
Power dissipation 625W
Gate-emitter voltage ±20V
Pulsed collector current 680A
Collector current 75A