Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: G2R1000MT17J
    Tootja: GENESIC SEMICONDUCTOR
    Tootja tootekood: G2R1000MT17J
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

    8,45 € 8,45 € (KM-TA) 8.45 EUR

    8,45 €

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    Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7

    Mounting SMD
    Case TO263-7
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.7kV
    Drain current 4A
    Pulsed drain current 8A
    Power dissipation 54W
    On-state resistance 1Ω