Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W

    Multiples: 10.0
    Minimum quantity: 20.0
    Product code: YJQ4666B
    Manufacturer: YANGJIE TECHNOLOGY
    Manufacturer code: YJQ4666B
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    0.21 €

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    Specification for Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W

    Mounting SMD
    Case DFN2020-6
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TRENCH POWER LV
    Drain-source voltage -16V
    Drain current -5.6A
    Pulsed drain current -28A
    Power dissipation 2.2W
    On-state resistance 60mΩ
    Gate charge 7.2nC