Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: TSG65N195CE RVG
    Manufacturer: TAIWAN SEMICONDUCTOR
    Manufacturer code: TSG65N195CE RVG
    • Mounting
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88

    Mounting SMD
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-JFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology GaN
    Drain-source voltage 650V
    Drain current 11A
    Pulsed drain current 19A
    On-state resistance 195mΩ
    Gate charge 2.2nC