Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Multiples:
1.0
Minimum quantity:
1.0
Product code:
TSG65N068CE RVG
Manufacturer: TAIWAN SEMICONDUCTOR
Manufacturer code: TSG65N068CE RVG
Specification for Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Mounting | SMD |
Kind of package | tape |
Polarisation | unipolar |
Type of transistor | N-JFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | GaN |
Drain-source voltage | 650V |
Drain current | 30A |
Pulsed drain current | 60A |
On-state resistance | 68mΩ |
Gate charge | 6.7nC |