Transistor: P-MOSFET; unipolar; -20V; -10A; 1W; uDFN6

    Multiples: 1.0
    Minimum quantity: 3.0
    Product code: SSM6J501NU,LF
    Manufacturer: TOSHIBA
    Manufacturer code: SSM6J501NU,LF
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: P-MOSFET; unipolar; -20V; -10A; 1W; uDFN6

    Mounting SMD
    Case uDFN6
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage -20V
    Drain current -10A
    Pulsed drain current -30A
    Power dissipation 1W
    On-state resistance 43mΩ
    Gate charge 29.9nC