Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SIHD2N80AE-GE3
    Manufacturer: VISHAY
    Manufacturer code: SIHD2N80AE-GE3
    • Mounting
    • Case
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    2.01 € 2.01 € (wo VAT) 2.0100000000000002 EUR

    2.01 €

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    Specification for Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; DPAK

    Mounting SMD
    Case DPAK, TO252
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage 800V
    Drain current 1.8A
    Pulsed drain current 3.6A
    Power dissipation 62.5W
    On-state resistance 2.5Ω
    Gate charge 10.5nC