Transistor: P-MOSFET
Multiples:
3000.0
Minimum quantity:
3000.0
Product code:
SIA817EDJ-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SIA817EDJ-T1-GE3
Specification for Transistor: P-MOSFET
Mounting | SMD |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET + Schottky |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | -30V |
Drain current | -4.5A |
Pulsed drain current | -15A |
Power dissipation | 6.5W |
On-state resistance | 125mΩ |
Gate charge | 23nC |