Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8

Multiples: 1.0
Minimum quantity: 1.0
Product code: SI9933CDY-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SI9933CDY-T1-GE3
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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1.00 €

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Specification for Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8

Mounting SMD
Case SO8
Kind of package reel, tape
Polarisation unipolar
Type of transistor P-MOSFET
Kind of channel enhanced
Drain-source voltage -20V
Drain current -4A
Power dissipation 2W
On-state resistance 58mΩ
Gate charge 8nC