Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI9407BDY-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI9407BDY-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    1.56 € 1.56 € (wo VAT) 1.56 EUR

    1.56 €

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    Specification for Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -60V
    Drain current -2.6A, -4.7A
    Pulsed drain current -20A
    Power dissipation 5W
    On-state resistance 150mΩ
    Gate charge 22nC