Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Multiples:
6000.0
Minimum quantity:
6000.0
Product code:
SI7252ADP-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SI7252ADP-T1-GE3
Product downloads
Specification for Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A
Mounting | SMD |
Case | PowerPAK® SO8 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET x2 |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 100V |
Drain current | 23A |
Pulsed drain current | 70A |
Power dissipation | 21.6W |
On-state resistance | 22.5mΩ |
Gate charge | 26.5nC |