Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A

    Multiples: 6000.0
    Minimum quantity: 6000.0
    Product code: SI7252ADP-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI7252ADP-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A

    Mounting SMD
    Case PowerPAK® SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 100V
    Drain current 23A
    Pulsed drain current 70A
    Power dissipation 21.6W
    On-state resistance 22.5mΩ
    Gate charge 26.5nC