Transistor: N/P-MOSFET

Multiples: 3000.0
Minimum quantity: 3000.0
Product code: SI6562CDQ-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SI6562CDQ-T1-GE3
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N/P-MOSFET

Mounting SMD
Case TSSOP8
Kind of package reel, tape
Polarisation unipolar
Type of transistor N/P-MOSFET
Kind of channel enhanced
Technology TrenchFET®
Drain-source voltage 20/-20V
Drain current 4.2/-4.9A
Pulsed drain current 30A
Power dissipation 1/1.1W
On-state resistance 22/30mΩ
Gate charge 23/51nC