Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.9A; 0.6W
Multiples:
0.0
Minimum quantity:
0.0
Product code:
SI5855DC-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SI5855DC-T1-GE3
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Specification for Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.9A; 0.6W
Mounting | SMD |
Case | 1206-8 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET + Schottky |
Kind of channel | enhanced |
Drain-source voltage | -20V |
Drain current | -1.9A |
Power dissipation | 600mW |
On-state resistance | 240mΩ |
Gate-source voltage | ±8V |
Gate charge | 7.7nC |