Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5/-2.7A; 2.3/2.7W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI4590DY-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI4590DY-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5/-2.7A; 2.3/2.7W

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N/P-MOSFET
    Kind of channel enhanced
    Drain-source voltage 100/-100V
    Drain current 4.5/-2.7A
    Power dissipation 2.3/2.7W
    On-state resistance 57/183mΩ
    Gate charge 4/11.6nC