Transistor: P-MOSFET; unipolar; -8V; -3.5A; 1.7W; SOT23

    Multiples: 1.0
    Minimum quantity: 5.0
    Product code: SI2305CDS-T1-GE3-1
    Manufacturer: VISHAY
    Manufacturer code: SI2305CDS-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.33 € 0.33 € (wo VAT) 0.33 EUR

    0.33 €

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    Specification for Transistor: P-MOSFET; unipolar; -8V; -3.5A; 1.7W; SOT23

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -8V
    Drain current -3.5A
    Pulsed drain current -20A
    Power dissipation 1.1W
    On-state resistance 65mΩ
    Gate charge 30nC