Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W

Multiples: 1.0
Minimum quantity: 1.0
Product code: S2M0040120K-1
Manufacturer: SMC DIODE SOLUTIONS
Manufacturer code: S2M0040120K-1
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • On-state resistance
  • Gate charge

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16.42 €

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Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W

Mounting THT
Case TO247-4
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices Kelvin terminal
Technology SiC
Drain-source voltage 1.2kV
Drain current 55A
Pulsed drain current 160A
On-state resistance 40mΩ
Gate charge 118nC