Transistor: N-MOSFET; Trench; unipolar; 100V; 6.5A; Idm: 26A; 8.3W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: PHT6NQ10T,135
    Manufacturer: NEXPERIA
    Manufacturer code: PHT6NQ10T,135
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

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    Specification for Transistor: N-MOSFET; Trench; unipolar; 100V; 6.5A; Idm: 26A; 8.3W

    Mounting SMD
    Case SC73, SOT223
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology Trench
    Drain-source voltage 100V
    Drain current 6.5A
    Pulsed drain current 26A
    Power dissipation 8.3W
    On-state resistance 90mΩ