Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W

Multiples: 1.0
Minimum quantity: 1.0
Product code: NTH4L080N120SC1
Manufacturer: ON SEMICONDUCTOR
Manufacturer code: NTH4L080N120SC1
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

18.48 € 18.48 € (wo VAT) 18.48 EUR

18.48 €

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Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W

Mounting THT
Case TO247-4
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices Kelvin terminal
Technology SiC
Drain-source voltage 1.2kV
Drain current 21A
Pulsed drain current 125A
Power dissipation 28W
On-state resistance 80mΩ
Gate charge 56nC