IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Multiples:
1.0
Minimum quantity:
1.0
Product code:
NCP5111DR2G
Manufacturer: ONSEMI
Manufacturer code: NCP5111DR2G
Product downloads
Specification for IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Output current | -500...250mA |
Mounting | SMD |
Supply voltage | 10...20V DC |
Case | SO8 |
Type of integrated circuit | driver |
Operating temperature | -40...125°C |
Kind of package | reel, tape |
Number of channels | 2 |
Protection | undervoltage |
Number of pins | 8 |
Topology | IGBT half-bridge, MOSFET half-bridge |
Voltage class | 600V |
Kind of integrated circuit | gate driver, high-/low-side |
Pulse fall time | 75ns |
Max operating temperature | 125°C |