Transistor: IGBT; 2.5kV; 4A; 100W; SMPD; Features: high voltage

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: MMIX4G20N250
    Manufacturer: IXYS
    Manufacturer code: MMIX4G20N250
    • Mounting
    • Case
    • Kind of package
    • Features of semiconductor devices
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: IGBT; 2.5kV; 4A; 100W; SMPD; Features: high voltage

    Mounting SMD
    Case SMPD
    Kind of package tube
    Features of semiconductor devices high voltage
    Turn-on time 217ns
    Power dissipation 100W
    Gate-emitter voltage ±20V
    Pulsed collector current 105A
    Topology H-bridge
    Collector current 4A
    Gate charge 53nC
    Collector-emitter voltage 2.5kV
    Turn-off time 1.066µs