Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Multiples:
1.0
Minimum quantity:
1.0
Product code:
MMIX1G320N60B3
Manufacturer: IXYS
Manufacturer code: MMIX1G320N60B3
Product downloads
Specification for Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Mounting | SMD |
Case | SMPD |
Kind of package | tube |
Type of transistor | IGBT |
Technology | BiMOSFET™, GenX3™, PT |
Turn-on time | 107ns |
Power dissipation | 1kW |
Gate-emitter voltage | ±20V |
Pulsed collector current | 1kA |
Collector current | 180A |
Gate charge | 585nC |
Collector-emitter voltage | 600V |
Turn-off time | 595ns |