Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Multiples:
1.0
Minimum quantity:
1.0
Product code:
MMIX1G120N120A3V1
Manufacturer: IXYS
Manufacturer code: MMIX1G120N120A3V1
Product downloads
Specification for Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Mounting | SMD |
Case | SMPD |
Kind of package | tube |
Type of transistor | IGBT |
Technology | BiMOSFET™, GenX3™, PT |
Turn-on time | 105ns |
Power dissipation | 400W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 700A |
Collector current | 105A |
Gate charge | 420nC |
Collector-emitter voltage | 1.2kV |
Turn-off time | 1365ns |