Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: MMIX1F520N075T2
    Manufacturer: IXYS
    Manufacturer code: MMIX1F520N075T2
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD

    Mounting SMD
    Case SMPD
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, HiPerFET™, TrenchT2™
    Drain-source voltage 75V
    Drain current 500A
    Power dissipation 830W
    On-state resistance 1.6mΩ
    Reverse recovery time 150ns
    Gate charge 545nC